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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleSS12L R3G
SS12L R3G Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SS12L R3G - TSC (Taiwan Semiconductor)

Manifakti Nimewo Pati
SS12L R3G
Manifakti
Taiwan Semiconductor
Allelco Nimewo Pati
32D-SS12L R3G
ECAD modèl
Pati Deskripsyon
DIODE SCHOTTKY 20V 1A SUB SMA
Deskripsyon detaye
Pake
DO-219AB
Done fèy
SS12L - SS115L.pdf
RoHs Status
Plon gratis / RoHS konfòme
Nan stok: 279810

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SS12L R3G Tech
TSC (Taiwan Semiconductor) - SS12L R3G espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak TSC (Taiwan Semiconductor) - SS12L R3G

Pwodwi atribi Valè atribi  
Manifakti Taiwan Semiconductor  
Voltage - Forward (Vf) (Max) @ Si 450mV @ 1A  
Voltage - DC ranvèse (Vr) (Max) 20V  
Founisè Aparèy pake Sub SMA  
Vitès Fast Recovery = 200mA (Io)  
Seri -  
Anbalaj Original-Reel®  
Pake / Ka DO-219AB  
Lòt non yo SS12L R3GDKR
SS12L R3GDKR-ND
SS12LR3GDKR
 
Operating Tanperati - Junction -55°C ~ 125°C  
Pwodwi atribi Valè atribi  
Mounting Kalite Surface Mount  
Imidite sansiblite Nivo (MSL) 1 (Unlimited)  
Manifakti Creole Tan Lead 25 Weeks  
Plon gratis Status / RoHS Status Lead free / RoHS Compliant  
Kalite dyod Schottky  
Detaye Deskripsyon Diode Schottky 20V 1A Surface Mount Sub SMA  
Kouran - Reverse Leakage @ Vr 400µA @ 20V  
Kouran - Mwayèn Rectified (Io) 1A  
Kapasite @ Vr, F -  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou TSC (Taiwan Semiconductor) SS12L R3G.

Pwodwi atribi SS12L R3G SS12HE3/61T SS12P3LHM3/86A SS12P2L-M3/86A
Nimewo Pati SS12L R3G SS12HE3/61T SS12P3LHM3/86A SS12P2L-M3/86A
Manifakti TSC (Taiwan Semiconductor) Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Founisè Aparèy pake Sub SMA DO-214AC (SMA) TO-277A (SMPC) TO-277A (SMPC)
Kouran - Mwayèn Rectified (Io) 1A 1A 12A 12A
Kouran - Reverse Leakage @ Vr 400µA @ 20V 200 µA @ 20 V 1 mA @ 30 V 1 mA @ 20 V
Plon gratis Status / RoHS Status Lead free / RoHS Compliant - - -
Kalite dyod Schottky - - -
Imidite sansiblite Nivo (MSL) 1 (Unlimited) - - -
Anbalaj Original-Reel® - - -
Lòt non yo SS12L R3GDKR
SS12L R3GDKR-ND
SS12LR3GDKR
- - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Seri - - eSMP® eSMP®
Kapasite @ Vr, F - - 930pF @ 4V, 1MHz 930pF @ 4V, 1MHz
Manifakti Creole Tan Lead 25 Weeks - - -
Voltage - DC ranvèse (Vr) (Max) 20V 20 V 30 V 20 V
Detaye Deskripsyon Diode Schottky 20V 1A Surface Mount Sub SMA - - -
Operating Tanperati - Junction -55°C ~ 125°C -65°C ~ 125°C -55°C ~ 150°C -55°C ~ 150°C
Vitès Fast Recovery = 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ Si 450mV @ 1A 500 mV @ 1 A 560 mV @ 12 A 560 mV @ 12 A
Pake / Ka DO-219AB DO-214AC, SMA TO-277, 3-PowerDFN TO-277, 3-PowerDFN

SS12L R3G fich PDF

Download SS12L R3G PDF fich ak dokiman TSC (Taiwan Semiconductor) pou SS12L R3G - TSC (Taiwan Semiconductor).

Datasheets
SS12L - SS115L.pdf

Shipment

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Sètifikasyon & Manm

Wè plis
SS12L R3G Image

SS12L R3G

TSC (Taiwan Semiconductor)
32D-SS12L R3G

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